| 摘要 |
<p>A Ti film or a Ta film is formed as a barrier metal film on a substrate by sputtering method, a nitride film is formed on the barrier metal film by sputtering method, and a Cu film is formed on the nitride film by CVD method. Then, annealing is performed at 100-400°C. Thus, adhesiveness between the barrier metal film and the Cu film is improved by forming the Cu film in such manner.</p> |
