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发明名称
半导体装置、其制造方法、以及背照式半导体装置
摘要
本发明提供一背照式半导体装置(backside illuminated semiconductor device)。上述装置包括一基底,其具有一正面与一背面;复数个感应器元件形成于该基底中,而各个该感应器元件用来接收经引导朝向该背面的光线;以及一感应器隔离结构形成于该基底中,将该感应器隔离结构水平配置于两个相邻的该感应器元件间,且垂直配置于该背面与正面间。
申请公布号
TW200832685
申请公布日期
2008.08.01
申请号
TW096124889
申请日期
2007.07.09
申请人
台湾积体电路制造股份有限公司
发明人
许慈轩;伍寿国;杨敦年
分类号
H01L27/14(2006.01)
主分类号
H01L27/14(2006.01)
代理机构
代理人
洪澄文;颜锦顺
主权项
地址
新竹市新竹科学工业园区力行六路8号
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