发明名称 SEMICONDUCTOR MEMORY DEVICE AND I/O DRIVE CIRCUITS THEREOF AND CURRUNT SUPPLY METHOD FOR THEM
摘要 A semiconductor memory device and an I/O drive circuit thereof and a current supply method for the same are provided to reduce output power noise, by supplying a current through different method according to data pattern. A semiconductor memory device includes an I/O(Input/Output) drive circuit(DQ0-DQ6) and a current supply circuit(22). The current supply circuit supplies a current generated from an internal voltage to the I/O drive circuit, and supplies a current generated from an external voltage when pattern of the data inputted to the I/O drive circuit is changed, to the I/O drive circuit. When the data has a constant level, the current supply circuit prevents the current generated from the external voltage from being supplied to the I/O drive circuit. The I/O drive circuit further includes a pulse generation circuit generating a pulse when the data is changed from a high level to a low level or from a low level to a high level. The current supply circuit operates according to the pulse.
申请公布号 KR100849957(B1) 申请公布日期 2008.08.01
申请号 KR20070023114 申请日期 2007.03.08
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, YOUNG SIK
分类号 G11C5/14;G11C7/10 主分类号 G11C5/14
代理机构 代理人
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