发明名称 TECHNIQUE FOR IMPROVING THE PERFORMANCE AND EXTENDING THE LIFETIME OF AN ION SOURCE WITH GAS DILUTION
摘要 A technique improving the performance and extending the lifetime of an ion source with gas dilution is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for improving performance and extending lifetime of an ion source in an ion implanter with gas dilution. The method may comprise releasing a predetermined amount of dopant gas into an ion source chamber, and releasing a predetermined amount of dilutant gas into the ion source chamber. The dilutant gas may comprise a mixture of a xenon- containing gas and a hydrogen-containing gas for diluting the dopant gas to improve the performance and extend the lifetime of the ion source.
申请公布号 WO2008091729(A2) 申请公布日期 2008.07.31
申请号 WO2008US50471 申请日期 2008.01.08
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.;PEREL, ALEXANDER, S.;CHANEY, CRAIG, R. 发明人 PEREL, ALEXANDER, S.;CHANEY, CRAIG, R.
分类号 H01J37/08;H01J27/00;H01J37/317;H01J37/32;H01L21/265 主分类号 H01J37/08
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