| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a magnetic random access memory that can improve data writing characteristics and also provide a method for writing data thereto. <P>SOLUTION: The magnetic random access memory is provided with: a memory element MTJm including a fixed layer where the magnetizing direction is fixed, a recording layer where the magnetizing direction can be inverted on the basis of a first threshold and a non-magnetic layer formed between the fixed layer and the recording layer where the magnetizing directions of the fixed layer and the recording layer are set to be in a parallel or non-parallel state in accordance with the direction of a current flowing between the fixed layer and the recording layer; a first wiring lead BL connected to one end of the memory cell element; a transistor Tr where one end of a current path is connected to the other end of the memory cell element; a second wiring lead SL connected to the other end of the current path; and a resistance changing element AF electrically connected to the memory cell element to change a resistance value thereof on the basis of the second threshold different from the first threshold. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
