THERMOELECTRIC NANOWIRE COMPOSITES

摘要

An MOCVD process provides aligned p- and n- type nanowire arrays which are then filled with p- and n- type thermoelectric films to form the respective p-leg and n-leg of a thermoelectric device. The thermoelectric nanowire synthesis process is integrated with a photolithographic microfabrication process. The locations of the p- and n-type nanowire micro arrays are defined by photolithography. Metal contact pads at the bottom and top of these nanowire arrays which link the p- and n-type nanowires in series are defined and aligned by photolithography.