发明名称 Structure and method for self protection of power device
摘要 A resetable over-current self-protecting semiconductor power device comprises a vertical power semiconductor chip and an over-current protection layer composed of current limiting material such as a PTC material. The over-current protection layer may be sandwiched between the vertical power semiconductor chip and a conductive plate, which could be a leadframe, a metal plate, a PCB plate or a PCB that the device is mounted on.
申请公布号 US2008180871(A1) 申请公布日期 2008.07.31
申请号 US20070657862 申请日期 2007.01.25
申请人 ALPHA & OMEGA SEMICONDUCTOR, LTD 发明人 HEBERT FRANCOIS;SUN MING
分类号 H02H5/04;H01L21/60 主分类号 H02H5/04
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