| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device wherein a threshold voltage difference when reading data is large and data holding time is long, and to provide a method of manufacturing the same. <P>SOLUTION: The semiconductor memory device has first and second semiconductor layers facing each other with a back gate insulation film BGI in between; a first conductive plate PL formed in the first semiconductor layer; a gate insulation film GI that is formed on the surface of the second semiconductor layer, being in contact with a second surface opposite to a first surface in contact with the back gate insulation film BGI; a gate electrode G formed in contact with the gate insulation film GI; a first conductive type body area B in the second semiconductor layer; a second conductive type source layer S and a drain layer D that are formed to pinch the body area B; and a second conductive type diffusion layer 11 formed on the surface of the first semiconductor layer. In this case, the body area B is electrically in floating state, wherein potential is accumulated or discharged to store data. <P>COPYRIGHT: (C)2008,JPO&INPIT |
