| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a low on-resistance power transistor. <P>SOLUTION: A semiconductor device includes: a metal header; a semiconductor chip constituting a power MOSFET, which is fixed on the header; seal consisting of insulating resin, which covers the semiconductor chip, the header or the like; a drain lead connected to the header, which projects from one side surface of the seal; a source lead and a gate lead which project side by side from the one side surface of the seal; wires located inside the seal, which connect electrodes on an upper surface of the semiconductor chip with the source lead and the gate lead. A gate electrode pad locates near a lead post for the gate lead and a source electrode pad locates distantly from a lead post for the source lead. <P>COPYRIGHT: (C)2008,JPO&INPIT |
