| 摘要 |
A fabrication method of a semiconductor package is applied to fabricate the package with the lead frame. The fabrication method includes: performing a surface treatment on a carrier; electroplating a plurality of metal-stacked layers on the surface of the carrier, wherein the top of the metal-stacked layer is a bonding surface and the bottom of the metal-stacked layer is a welding surface; performing a chip bonding step; forming a molding compound on the carrier; removing the carrier and performing a dicing step to form a plurality of semiconductor packages. The fabrication method of a semiconductor package also includes that forming a plurality of cavities on the carrier surface, electroplating the metal-stacked layer on the cavities, and then performing the chip bonding step, forming the molding compound on the carrier; remove the carrier and performing the dicing step. Using the foregoing steps can prevent the overflow situation without using any tape.
|
