摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a CPP-GMR element that can hold a desired low element surface resistance, suppress an increase in noises and increase the thickness of a semiconductor oxide layer forming a spacer layer. <P>SOLUTION: The large magnetoresistive element is provided with a spacer layer, a magnetization fixed layer that is laminated in a manner to pinch the spacer layer and a free layer, and it has a CPP structure wherein sense current is applied in the lamination direction. The free layer functions to change the direction of magnetization according to the external magnetic field, and the spacer layer is provided with first and second nonmagnetic metal layers made of a nonmagnetic metallic material and a semiconductor oxide layer interposed between the first and second nonmagnetic metal layers. The semiconductor oxide layer forming the spacer layer is made mainly of zinc oxide, to which a metal hard to be oxidized than zinc is added. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |