发明名称 MAGNETORESISTIVE ELEMENT AND MAGNETIC DISK DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a CPP-GMR element that can hold a desired low element surface resistance, suppress an increase in noises and increase the thickness of a semiconductor oxide layer forming a spacer layer. <P>SOLUTION: The large magnetoresistive element is provided with a spacer layer, a magnetization fixed layer that is laminated in a manner to pinch the spacer layer and a free layer, and it has a CPP structure wherein sense current is applied in the lamination direction. The free layer functions to change the direction of magnetization according to the external magnetic field, and the spacer layer is provided with first and second nonmagnetic metal layers made of a nonmagnetic metallic material and a semiconductor oxide layer interposed between the first and second nonmagnetic metal layers. The semiconductor oxide layer forming the spacer layer is made mainly of zinc oxide, to which a metal hard to be oxidized than zinc is added. <P>COPYRIGHT: (C)2008,JPO&INPIT</p>
申请公布号 JP2008177271(A) 申请公布日期 2008.07.31
申请号 JP20070007984 申请日期 2007.01.17
申请人 TDK CORP 发明人 TSUCHIYA YOSHIHIRO;MIZUNO TOMOHITO;HIRATA KYO;SHIMAZAWA KOJI;HARA SHINJI
分类号 H01L43/10;G11B5/39;H01L43/08 主分类号 H01L43/10
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