SEMICONDUCTOR ELEMENT AND METHOD OF FORMING THE SAME, AND SEMICONDUCTOR CLUSTER EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To provide a method of forming a semiconductor element having improved electrical characteristics. SOLUTION: In the method, an insulating film 110 is formed on a semiconductor substrate 100 having a conductive pattern 105. By the patterning of the insulating film, an opening 115 exposing a part of a conductive pattern is formed and preliminary diffusion prevention films 120 are formed on the inner wall of the opening and on the upper surface of the insulating film. A first diffusion prevention film 120a is formed by supplying oxygen atoms, etc to the preliminary diffusion prevention film. A metal film 152 filling the opening surrounded by the first diffusion prevention film is formed. The semiconductor element manufactured by this method and semiconductor cluster equipment used for the manufacturing of the semiconductor element are provided. COPYRIGHT: (C)2008,JPO&INPIT