| 摘要 |
PROBLEM TO BE SOLVED: To assure breakdown strength of an outer peripheral resistant part even if substrate structures for a cell part and the outer peripheral resistant part are unified in a semiconductor device. SOLUTION: In the outer peripheral resistant part of the semiconductor device consisting of a super junction substrate 7, a zener diode 21 consisting of an N-type region 22 and a P-type region 23 in the direction from a cell part to the outer peripheral resistant part is provided on the surface of the super junction substrate 7. COPYRIGHT: (C)2008,JPO&INPIT
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