| 摘要 |
In one aspect of the present invention, a semiconductor device may include an isolation region provided in a semiconductor substrate and defining an active region, a gate electrode provided on the semiconductor substrate via a gate dielectric layer in the active region, a channel region provided below the gate electrode, a strain supplying layer provided between the channel region and the isolation region and being epitaxially grown, and configured to generate a strain in the channel region, a silicide layer provided on the strain supplying layer, a reformed layer provided between the silicide layer and the semiconductor substrate near the isolation region, and provided under the strain supplying layer, a source/drain region provided in a part of the strain supplying layer and a part of the reformed layer.
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