| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress threshold fluctuation due to the influence of charges between adjacent cells which becomes conspicuous by the size reduction of cell size. <P>SOLUTION: For the writing method of a semiconductor memory, the semiconductor memory is provided with a floating gate type transistor comprising a semiconductor substrate 11; a gate insulating film 12 formed on the semiconductor substrate; a floating gate electrode FG formed on the gate insulating film, and a control gate electrode CG, formed facing the floating gate electrode through a cavity part; and by forming an electrical path conducting the floating gate electrode and the control gate electrode in the cavity part or by making it vanish, capacitance between the semiconductor substrate and the control gate electrode is controlled. <P>COPYRIGHT: (C)2008,JPO&INPIT |
