PHOTOELECTRIC CONVERSION DEVICE AND METHOD OF PRODUCING THE SAME

摘要

A photoelectric conversion device includes a p-type layer, an i-type layer and an n-type layer each made of a silicon base semiconductor, stacked in this order, wherein the i-type layer contains n-type impurities in a concentration of 1.0x10¹⁶ to 2.0x10¹⁷ cm^-3.