LIGHT-EMITTER-BASED DEVICES WITH LATTICE-MISMATCHED SEMICONDUCTOR STRUCTURES

摘要

Some aspects for the invention. include a method and a structure including a light -emitting device (300, 300') disposed over a second crystalline semiconductor material (140) formed over a semiconductor substrate (100) comprising a first crystalline material. In some embodiments, the second crystalline semiconductor material (140) is proved in a trench (120) defined in a dielectric layer (110) which is disposed over said substrate (100). In some embodiments, the second crystalline semiconductor material is a lattice-mismatched to the first crystalline semiconductor material.