| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To form a metal layer that cannot be separated easily even if subjected to on a conducting layer. <P>SOLUTION: A first conducting layer 20 is formed on a semiconductor substrate 10 that has an electrode 14 electrically connected to an integrated circuit 12 while the integrated circuit 12 is formed on the semiconductor substrate 10 so that the electrode 14 is covered. A first conducting layer pattern 24 is formed by etching a first conducting layer 20. A second conducting layer 26 is formed while covering the first conducting layer pattern 24. A metal layer 30 is formed on a second conducting layer 26 so that the whole overlaps with the first conducting layer pattern 24 by electrolytic plating by allowing a current to flow to the second conducting layer 26. A second conducting layer pattern 32 is formed so that the whole overlaps with the first conducting layer pattern 24 by etching the second conducting layer 26 with the metal layer 30 as a mask. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
