| 摘要 |
PROBLEM TO BE SOLVED: To provide a power controller incorporating a temperature sensor capable of highly sensitive temperature control, and a manufacturing method for the power controller. SOLUTION: The power controller 100 includes trench-type MOSFETs 12 and trench-type diode devices 13 that are divided by trenches 4' and 4. The trench-type diode device 13 is composed of a board 1, an epitaxial layer 2, a first bias diffusion layer 3, and a low-doped anode layer 10 that are laminated in this order. Part of the first bias diffusion layer 3 penetrates the low-doped anode layer 10 for exposure at the surface of the anode layer 10, on which a second bias diffusion layer 11 is formed on the exposed first bias diffusion layer 3 and a high-doped anode layer 7 and a cathode layer 8 are formed on the low-doped anode layer 10. The trench 4 is so formed as to extend from the surface of the high-doped anode layer 7 to the epitaxial layer 2 to encircle the surrounding area. Each of the high doped anode layer 7, the cathode layer 8, the second bias diffusion layer 11, and the trench 4 is provided with an electrode. COPYRIGHT: (C)2008,JPO&INPIT
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