| 摘要 |
PROBLEM TO BE SOLVED: To provide a semi-insulating GaAs wafer without causing any slip after annealing treatment during the production of a device, and to provide a method for producing the semi-insulating GaAs wafer. SOLUTION: In the semi-insulating GaAs wafer, which is obtained by growing a semi-insulating GaAs single crystal and then slicing the grown semi-insulating GaAs single crystal, the dislocation density (hereinafter referred to as EDP) in the plane of the semi-insulating GaAs wafer is≥30,000 pieces/cm<SP>2</SP>to≤100,000 pieces/cm<SP>2</SP>, and when the strain in the radial direction of the GaAs wafer is defined as Sr and the strain in the tangential direction of a column is defined as St, the residual stress ¾Sr-St¾ in the plane of the GaAs wafer is≤1.8×10<SP>-5</SP>. COPYRIGHT: (C)2008,JPO&INPIT
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