| 摘要 |
PROBLEM TO BE SOLVED: To detect a timing increasing a possibility generating a short-circuit between a pair of object electrodes to be insulated on a semiconductor chip. SOLUTION: A pair of object electrodes composed of EQR electrodes 14 and FLR electrodes 16 is formed on a semiconductor substrate 28 for the semiconductor chip 10. A pair of sensor electrodes composed of the EQR electrodes 14 and first sensor electrodes 12 is configured on the semiconductor substrate 28. A detector 50 applies a voltage generating an electric field stronger than that generated between a pair of object electrodes between a pair of sensor electrodes between the pair of sensor electrodes. The detector 50 detects a current between a pair of sensor electrodes. The progressive speed of ion migration is increased with the strengthened electric field. Accordingly, a pair of sensor electrodes is short-circuited prior to a pair of object electrodes. The timing increasing the possibility generating the short-circuit between a pair of object electrodes can be detected as the timing making the current flow between a pair of sensor electrodes. COPYRIGHT: (C)2008,JPO&INPIT
|
