发明名称 UNSEEDED SILICON CARBIDE SINGLE CRYSTALS
摘要 <p>High volumes of relatively large, single crystals of silicon carbide are grown in a reactor from a point source, i.e., unseeded growth. The crystals may be grown colorless or near colorless and may be processed for many uses, including use as a diamond substitute for jewelry, as an optical element such as a watch face or a lens, or for other desired end uses.</p>
申请公布号 EP1948563(A2) 申请公布日期 2008.07.30
申请号 EP20060839803 申请日期 2006.11.09
申请人 THE PHYLLIS CRAIN IRREVOCABLE TRUST;FAUST, RICHARD S. 发明人 HUNTER, CHARLES, ERIC
分类号 C01B31/36;C30B11/00 主分类号 C01B31/36
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