发明名称 INTEGRATED CIRCUIT SYSTEM EMPLOYING DIFFERENTIAL SPACERS
摘要 <p>INTEGRATED CIRCUIT SYSTEM EMPLOYING DIFFERENTIAL SPACERS An integrated circuit system that includes: providing a substrate with an NFET device and a PFET device; forming an NFET first liner and an NFET first spacer over the NFET device; forming a PFET first liner and a PFET first spacer over the PFET device; forming a punch-through suppression layer within a PFET source/drain; forming an NFET differential spacer; and forming a PFET differential spacer. FIG. 10</p>
申请公布号 SG144029(A1) 申请公布日期 2008.07.29
申请号 SG20070174535 申请日期 2007.11.02
申请人 CHARTERED SEMICONDUCTOR MANUFACTURING LTD. 发明人 FU CHONG YUNG;GON LEE JAE
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