发明名称 |
INTEGRATED CIRCUIT SYSTEM EMPLOYING DIFFERENTIAL SPACERS |
摘要 |
<p>INTEGRATED CIRCUIT SYSTEM EMPLOYING DIFFERENTIAL SPACERS An integrated circuit system that includes: providing a substrate with an NFET device and a PFET device; forming an NFET first liner and an NFET first spacer over the NFET device; forming a PFET first liner and a PFET first spacer over the PFET device; forming a punch-through suppression layer within a PFET source/drain; forming an NFET differential spacer; and forming a PFET differential spacer. FIG. 10</p> |
申请公布号 |
SG144029(A1) |
申请公布日期 |
2008.07.29 |
申请号 |
SG20070174535 |
申请日期 |
2007.11.02 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
FU CHONG YUNG;GON LEE JAE |
分类号 |
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代理机构 |
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代理人 |
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地址 |
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