发明名称 Protection circuit against electrostatic discharge in semiconductor device
摘要 An electrostatic discharge protection circuit for use in a semiconductor device includes an electrostatic signal discharge unit for discharging an electrostatic signal; a first electrostatic detection voltage supplying unit for generating an electrostatic detection voltage in response to an alternating current component of the electrostatic signal; a driving unit for generating a driving voltage in response to the electrostatic detection voltage in order to drive the electrostatic signal discharge unit; and a second electrostatic detection voltage supplying unit enabled in response to the driving voltage for continuously supplying the electrostatic detection voltage to the driving unit in response to a direct current component of the electrostatic signal.
申请公布号 US7405915(B2) 申请公布日期 2008.07.29
申请号 US20060368117 申请日期 2006.03.03
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHOI NAK-HEON
分类号 H02H3/22 主分类号 H02H3/22
代理机构 代理人
主权项
地址