发明名称 Device comprising doped nano-component and method of forming the device
摘要 A device comprising a doped semiconductor nano-component and a method of forming the device are disclosed. The nano-component is one of a nanotube, nanowire or a nanocrystal film, which may be doped by exposure to an organic amine-containing dopant. Illustrative examples are given for field effect transistors with channels comprising a lead selenide nanowire or nanocrystal film and methods of forming these devices.
申请公布号 US7405129(B2) 申请公布日期 2008.07.29
申请号 US20050138797 申请日期 2005.05.26
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 AFZALI-ARDAKANI ALI;KAGAN CHERIE R.;MURRAY CHRISTOPHER B.;SANDSTROM ROBERT L.;TALAPIN DMITRI V.
分类号 H01L21/336 主分类号 H01L21/336
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