| 摘要 |
A nitride semiconductor light emitting device and a manufacturing method thereof are provided to form a roughness structure at a burnt region on a scribed surface and at a defect region of an isolation region for expanding the reflection and permeation regions of the light, thereby increasing the amount of light emitted to the outside. A substrate(110) is made of Si, SiC, GaAs, ZnO, or MgO. A buffer layer(120) is grown with a width of 100 to 2,000Å by injecting TMGa and ammonia gas into a reaction pipe. The buffer works for releasing stress between the substrate and an n type semiconductor layer(130). An active layer(140) has a multi-quantum well structure having InGaN/GaN, using an MOCVD(Metal Organic Chemical Vapor Deposition). The active layer generates light by binding electron holes of a p type semiconductor layer(150) with electrons the n type semiconductor layer. A transparent electrode layer(160) is formed on the p type semiconductor layer. An n side electrode(170) is deposited on the n type semiconductor layer, and a p side electrode(180) is deposited on the transparent electrode layer. A roughness structure(112) is formed at the side of the nitride semiconductor light emitting device.
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