| 摘要 |
A transistor of a semiconductor device and a method for manufacturing the same are provided to form an edge of a gate insulating layer which is overlapped by source and drain sections thicker for preventing drop of dispersion current flowed from the source section during an on state and preventing the GIDL(Gate-Induced Drain Leakage) increment. A transistor of a semiconductor device comprises a gate insulating layer(13), a gate electrode, and source and drain sections(18A,18B). The gate insulating layer is formed on a substrate(11), a part of the gate insulating layer being thicker than the other section. The gate electrode is formed on the gate insulating layer. The source and drain sections are formed on the substrate. A part of the drain section is overlapped with a part of the gate insulating layer, which is thicker. The gate insulating layer includes an oxide(13A) and a nitride layer(13B) formed on a part of the oxide.
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