发明名称 FLASH MEMORY DEVICE AND METHOD OF OPERATING THE SAME
摘要 A flash memory device and a method of operating the same are provided to enable a multi level cell flash memory device to operate without a flag cell indicating a program state. A memory cell array includes more than one block(320) including a number of pages. A controller(310) judges whether all pages of the block are programmed according to a read command, and performs the read command after performing dummy data program of a page, if the page which is not programmed exists. The controller includes a storing unit storing dummy data for dummy data program.
申请公布号 KR20080069389(A) 申请公布日期 2008.07.28
申请号 KR20070007046 申请日期 2007.01.23
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, YOU SUNG;KIM, DUCK JU
分类号 G11C16/02;G11C16/06;G11C16/10 主分类号 G11C16/02
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