发明名称 |
FLASH MEMORY DEVICE AND METHOD OF OPERATING THE SAME |
摘要 |
A flash memory device and a method of operating the same are provided to enable a multi level cell flash memory device to operate without a flag cell indicating a program state. A memory cell array includes more than one block(320) including a number of pages. A controller(310) judges whether all pages of the block are programmed according to a read command, and performs the read command after performing dummy data program of a page, if the page which is not programmed exists. The controller includes a storing unit storing dummy data for dummy data program.
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申请公布号 |
KR20080069389(A) |
申请公布日期 |
2008.07.28 |
申请号 |
KR20070007046 |
申请日期 |
2007.01.23 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM, YOU SUNG;KIM, DUCK JU |
分类号 |
G11C16/02;G11C16/06;G11C16/10 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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