| 摘要 |
A polishing composition is provided to perform polishing of both (0001) Si surface and a surface other than (0001) Si surface of a hexagonal silicon carbide single crystal wafer, such as (000-1) C surface, at a high polishing rate. A polishing composition comprises vanadate and an oxygen donating agent. The polishing composition optionally further comprises abrasive particles. The polishing composition is used for polishing a silicon carbide wafer. The polishing composition having a pH of 4-11.5 is used for polishing (0001) Si surface of a hexagonal silicon carbide single crystal wafer. The polishing composition having a pH of 8 or lower is used for polishing a surface other than (0001) Si surface of a hexagonal silicon carbide single crystal wafer.
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