| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to minimize wafer scraps caused by an over-polishing process during a chemical mechanical polishing process for forming a tungsten plug. An interlayer dielectric including a via hole is formed on a semiconductor substrate including a device forming region and a scribe lane region(S101). Tungsten is formed on the interlayer dielectric including the via hole(S102). A first chemical mechanical polishing process is performed on the first semiconductor substrate of plural semiconductor substrates(S103). A first profile of a first interlayer dielectric pattern formed in the first scribe lane region of the first semiconductor substrate is measured(S104). A second chemical mechanical polishing process is performed on the remaining semiconductor substrates except for the first semiconductor substrate.</p> |
