| 摘要 |
PROBLEM TO BE SOLVED: To suppress an increase in gate resistance and source/drain resistance in a salicide process. SOLUTION: A MOS field effect transistor manufacturing method is used for siliciding a gate, a source, and a drain surface in a self-aligning manner. The method includes a step for forming a high melting-point metal film on a semiconductor substrate formed with a gate, a source, and a drain region, a step for forming a high melting-point metal silicide layer by executing heat treatment within three hours from the formation of the high melting-point metal film, and a step for removing the unreacted high melting-point metal film. Here, one of the key points is the formation of the high melting-point metal silicide layer by executing heat treatment within three hours from the formation of the high melting-point metal film. It is more preferable to execute the step for forming the high melting-point metal silicide layer by heat treatment within two hours from the formation of the high melting-point metal film. COPYRIGHT: (C)2008,JPO&INPIT
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