| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a cross point type resistance change memory having a structure excellent in productivity by reducing the number of manufacturing steps unlike a conventional resistance change memory, and to provide a manufacturing method thereof. <P>SOLUTION: The resistance change memory has a configuration in which a multilayer structure 18 having a strip-like lower electrode 11, a strip-like upper electrode 13 crossing the lower electrode and a resistance change portion 12 positioned on a crossing portion between the lower and upper electrodes and sandwiched by both the electrodes is disposed on a substrate. In the memory, the resistance change portion 12 has two or more statuses having different electric resistance values, and changes from one status selected among two or more statues to the other status by applying a driving voltage or a driving current via both the electrodes, and a bit is assigned to the status of the resistance change portion. The multilayer structure further has a strip-like wiring electrode crossing the lower electrode and used for supplying a driving voltage and a driving current to the lower electrode via a plug disposed on a crossing portion between itself and the lower electrode, and in the multilayer structure, the resistance change portion and the plug are provided in the same layer in a state where they are insulated from each other by an insulating portion. <P>COPYRIGHT: (C)2008,JPO&INPIT |
