| 摘要 |
This control system for manufacturing a single crystal has a resistivity profile memory which stores a resistivity profile for a portion of a single crystal that is rendered into wafers; a simulator which determines a resistivity profile formula for indicating a resistivity profile within a reusable ingot that is the reusable material in the single crystal from an impurity concentration estimating formula including one or more variables selected from among resistivities at both ends of the reusable ingot in the crystal growth axis direction, the impurity concentration when crystal pulling begins, a segregation coefficient, a solidification ratio and a correction coefficient, and from the resistivity profile; and an impurity amount calculator which calculates, based on the resistivity profile formula, the amount of impurity within the reusable ingot. |
