发明名称 |
PATTERN CORRECTION APPARATUS, PATTERN CORRECTION PROGRAM, PATTERN CORRECTION METHOD AND FABRICATION METHOD FOR SEMICONDUCTOR DEVICE |
摘要 |
A pattern correction apparatus for performing both of optical proximity effect correction and process proximity effect correction with regard to a design pattern includes: a correction calculation means configured to perform correction calculation by two-dimensional model-based optical proximity effect correction for each of sampling points set on pattern edges which form the design pattern; the correction calculation means performing the correction calculation which involves weighting with a two-dimensional distribution of the pattern edges around the sampling point taken into consideration; the weighting being performed such that a high weight is applied to a region in which reaction products which can have an influence on the sampling point are produced but a low weight is applied to any other region.
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申请公布号 |
US2008178141(A1) |
申请公布日期 |
2008.07.24 |
申请号 |
US20070673156 |
申请日期 |
2007.02.09 |
申请人 |
SATO SHUNICHIRO |
发明人 |
SATO SHUNICHIRO |
分类号 |
G06F17/50;G03F1/36;G03F1/68;G03F1/70;H01L21/027;H01L21/3065;H01L21/82;H01L21/822;H01L27/04 |
主分类号 |
G06F17/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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