| 摘要 |
A semiconductor device includes a gate electrode, a source electrode, a drain electrode and an electrode part. The gate electrode is formed above a semiconductor layer. The source electrode and the drain electrode are formed on the semiconductor layer. The gate electrode is located between the source electrode and the drain electrode. The electrode part is provided between the gate electrode and the drain electrode and has a width of 10 nm to 300 nm in a direction between the gate electrode and the drain electrode.
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