| 摘要 |
A method for fabricating a semiconductor device includes providing a substrate, forming a sacrificial oxide layer over the substrate, the sacrificial layer having a higher etch rate than the substrate, forming a hard mask pattern over the sacrificial oxide layer, wet-etching the sacrificial oxide layer using the hard mask pattern as an etch barrier, and forming a recess by etching an exposed substrate using the hard mask pattern as an etch barrier.
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