| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polishing pad that performs a planarization process for a material required for high planarization, such as a silicon wafer for a semiconductor device, a magnetic disk, an optical lens, etc. at a stable and high speed; to provide a polishing pad that makes the production of the sheet-forming, the surface treatment of grooves, etc., easy and that has an excellent thickness precision, a high polishing speed and a uniform polishing speed; to provide a polishing pad that will not cause dispersion of quality due to individual difference, that is easy to perform the processing pattern change, that makes fine processing possible, and that has no occurrence of burr when projections and depressions are formed; and to provide a polishing pad that produces no slurry, can be mixed with grinding particles at a high concentration, and even if the grinding particles is dispersed, the scratch due to the aggregation of the grinding particles hardly occurs. <P>SOLUTION: A polishing layer of the polishing pad is formed by a hardening composition that is hardened by energy ray, and the polishing layer has on its surface irregularities formed by a photolithography method. In the polishing pad, the polishing layer resin with distributed abrasive grains is a resin having 20 to 1,500 eq/ton ionicity radicals. <P>COPYRIGHT: (C)2008,JPO&INPIT |
