| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a three-dimensionally structured gate insulating film which can easily deal with miniaturization of a gate structure and be easily manufactured. <P>SOLUTION: This semiconductor device has a structure in which a three-dimensionally structured gate insulating film is formed on a semiconductor substrate, a gate electrode contacting the gate insulating film is protrudingly formed on the semiconductor substrate, a source electrode and a drain electrode are formed on the semiconductor substrate around the gate insulating film via a diffusion layer region of the semiconductor substrate, the upper surface of the semiconductor substrate around the gate electrode is covered with a protective insulating film for covering the side surface of the gate electrode protrudingly formed on the semiconductor substrate, and an interlayer insulating film is laminated on the protective insulating film. <P>COPYRIGHT: (C)2008,JPO&INPIT |
