发明名称 SEMICONDUCTOR DEVICE AND DISPLAY DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a display device that can stably keep the operation characteristic in a bottom-gate type organic thin-film transistor without being affected by an electrode formed in its upper layer and that can allow high reliable display by using it as a driving element. <P>SOLUTION: The display device is provided with a bottom-gate type thin-film transistor Tr formed on a substrate 1 and a pixel electrode a on the upper side of the thin-film transistor Tr with a protective film 11 and an interlayer insulation film 15 in between. A conductive shield layer 13a is arranged between the thin-film transistor Tr and the pixel electrode a to keep insulation therebetween. <P>COPYRIGHT: (C)2008,JPO&INPIT</p>
申请公布号 JP2008171907(A) 申请公布日期 2008.07.24
申请号 JP20070001930 申请日期 2007.01.10
申请人 SONY CORP 发明人 YAGI ITSUKI;YUMOTO AKIRA
分类号 H01L29/786;G02F1/1368;G09F9/30;H01L51/05 主分类号 H01L29/786
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