| 摘要 |
PROBLEM TO BE SOLVED: To improve the reliability of a semiconductor device by effectively restraining copper diffusion in a copper-containing metal film. SOLUTION: The semiconductor device 100 includes an interlayer insulating film 101 formed in the upper part of a silicon substrate and provided with a dent part 103 at a predetermined position, a barrier metal film 105 for covering the inner wall of the interlayer insulating film 101, a lower layer copper wiring 107 provided in contact with the barrier metal film 105 and embedded inside the dent part 103, and a protection film 115 disposed in contact with the upper part of the lower layer copper wiring 107 substantially on the entire surface of the upper part of the lower layer copper wiring 107. The upper surface of the lower layer copper wiring 107 is provided in a state recessed from the upper surface of the barrier metal film 105 at the side wall of the dent part 103 to the substrate side. The protection film 115 contains Co or Ni as a component element. The Co concentration or the Ni concentration in the protection film 115 in the vicinity of the side wall of the barrier metal film 105 is higher than the Co concentration or the Ni concentration in the barrier metal film 105 at the central part of the dent part 103. COPYRIGHT: (C)2008,JPO&INPIT
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