| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where an active region is enlarged by narrowing an inactive region and on-state resistance can be reduced. SOLUTION: A trench 25 is formed in a pn-junction surface end part of an n-well region 2 and a p-base region 4. Thus, a depletion layer is prevented from extending to an outer peripheral part of the trench 25, the inactive region (region of pressure resistant structure) is narrowed and a chip size is miniaturized. Since the active region can be enlarged when the chip sizes are made the same, on-state resistance can be reduced. COPYRIGHT: (C)2008,JPO&INPIT
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