Semiconductor base material and method of manufacturing the material

摘要

A semiconductor base comprising a sapphire substrate and an Al x Ga4 1-x-y In y N (0‰ x‰ 1, 0‰ y‰ 1, 0‰ x+y‰ 1) crystal layer grown on the substrate, characterized in that
the sapphire substrate has a crystal growth plane, the crystal growth plane having a concavo-convex surface, and
during growth of the crystal layer, facet structure growth occurs from the concave part of the concavo-convex surface, due to which, the crystal layer contains above the concave part a dislocation line that is bent at a position higher than the top part of the convex part.