ARSENIC AND PHOSPHORUS DOPED SILICON WAFER SUBSTRATES HAVING INTRINSIC GETTERING,申请号EP20060846251-传众专利搜索

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发明名称	ARSENIC AND PHOSPHORUS DOPED SILICON WAFER SUBSTRATES HAVING INTRINSIC GETTERING
摘要
申请公布号	EP1945838(A2)	申请公布日期	2008.07.23
申请号	EP20060846251	申请日期	2006.11.08
申请人	MEMC ELECTRONIC MATERIALS, INC.	发明人	FALSTER, ROBERT, J.;VORONKOV, VLADIMIR;BORIONETTI, GABRIELLA
分类号	C30B33/02	主分类号	C30B33/02
代理机构		代理人
主权项
地址

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