MANUFACTURING METHOD OF POLY-CRYSTAL SILICON PHOTOVOLTAIC DEVICE HAVING LOW-TEMPERATURE USING HORIZONTALLY METAL INDUCED CRYSTALLIZATION METHOD

摘要

A method for fabricating a low-temperature polycrystalline photovoltaic conversion device using horizontal MIC(metal induced crystallization) is provided to increase current conductivity in silicon and remarkably reduce a leakage current by depositing a metal layer on the lateral end surface of a silicon thin film so that the shape and progression direction of a silicon crystal is adjusted. At least one amorphous silicon thin film(203) is formed on a substrate(201). At least one lateral end part exposed to the amorphous silicon thin film. A metal layer(205) is formed on the lateral end part to horizontally crystallize the amorphous silicon thin film. An insulation layer(202) can be formed between the substrate and the amorphous silicon thin film. Metal ions can be implanted into the amorphous silicon thin film formed on the substrate.