| 摘要 |
<p>Wavelength dependence of diffraction X-ray intensity of a single crystal sample is measured using an X-ray incident optical system of simple structure so that the polarity of the single crystal sample can be judged. When the polarity of the {111} face of a GaAs single crystal sample (18) is judged, for example, an X-ray source (10) which can generate X-rays in a predetermined wavelength range including in the middle the wavelength at the K absorption end of Ga, i.e. an X-ray source of Au target, is employed. An X-ray beam (12) emitted from that X-ray source is reflected on a paraboloidal multilayer film mirror (14) to form a parallel beam (16) including an X-ray in a predetermined wavelength range. The sample (18) is irradiated with the parallel beam and the intensity of a diffraction X-ray therefrom is detected by an X-ray detector (22). Wavelength dependence of diffraction X-ray intensity is measured in the wavelength range including the wavelength at the absorption end by performing 2¸/É scanning. Polarity is judged by determining the ratio of diffraction X-ray intensity on the shorter wavelength side than the absorption end to diffraction X-ray intensity on the longer wavelength side than the absorption end.</p> |
