| 摘要 |
<p>A copolymer of a maleic anhydride derivative with (meth)acrylic compound is provided to form a photoresist pattern having low dependency on a wafer, excellent transparency to a wavelength range of KrF excimer laser, ArF excimer laser, X-ray of e-beams, and high resolution and developability. A copolymer of a maleic anhydride derivative with (meth)acrylic compound is represented by the following formula 1. In formula 1, R1, R2, R3 and R4 are independent from each other, each of R1 and R2 represents H, a C1-C30 alkyl group containing an ether group, ester group, carbonyl group, acetal group, epoxy group, nitrile group or aldehyde group or not, and each of R3 and R4 represents H or methyl; X represents any one of maleic anhydride and norbornene dicarboxylic anhydride represented by the following formula 2 and 3, respectively; and each of x, y and z represents the number of repeating units in the backbone, wherein x+y+z=1, 0.1<x/(x+y+z)<0.8, 0.1<y/(x+y+z)<0.8, and 0.1<=z/(x+y+z)<0.8.</p> |
