发明名称 PIEZOELECTRIC THIN FILM RESONATOR
摘要 A piezoelectric thin film resonator in which spurious of short wavelength can be suppressed. In a part of a thin film portion supported partially on a substrate (12) while isolated acoustically therefrom, a) an oscillatory portion (24) consisting of a pair of electrodes (14, 18) superposed in plan view while sandwiching a piezoelectric film (16), and b) an extra film (20) provided on the piezoelectric film (16) or the electrode (18) at least along a portion of the outer circumference of the oscillatory portion (24) are included. Assuming the acoustic impedance of the extra film (20) defined by the root of product of density and Young's modulus is x(MN sec/m3), product of the density and thickness of the extra film (20) is A, product of the density and thickness of the electrodes (14, 18) is B, and y=A/B, following relations are satisfied; (i) for 9.0<=x<44.0, 0.0092.x+0.88<=y<0.067.x+0.60 (1a), and (ii) for 44.0<=x<79.0,-0.0035.x+1.45<=y<0.015.x+2.9 (1b).
申请公布号 KR20080064842(A) 申请公布日期 2008.07.09
申请号 KR20087009701 申请日期 2008.04.23
申请人 MURATA MANUFACTURING COMPANY, LTD. 发明人 UMEDA KEIICHI;KAWAMURA HIDEKI
分类号 H03H9/24;H01L41/09;H01L41/18;H01L41/22;H01L41/39;H03H9/17;H03H9/54 主分类号 H03H9/24
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