| 发明名称 |
Formation of ultra-shallow junctions by gas-cluster ion irradiation |
| 摘要 |
Method of forming one or more doped regions in a semiconductor substrate and semiconductor junctions formed thereby, using gas cluster ion beams.
|
| 申请公布号 |
US7396745(B2) |
申请公布日期 |
2008.07.08 |
| 申请号 |
US20050080800 |
申请日期 |
2005.03.11 |
| 申请人 |
TEL EPION INC. |
发明人 |
BORLAND JOHN O.;HAUTALA JOHN J.;SKINNER WESLEY J. |
| 分类号 |
H01L21/425 |
主分类号 |
H01L21/425 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
