| 摘要 |
A low-temperature chemical vapor deposition process for depositing of a low-resistivity ruthenium metal layers that can be used as barrier/seed layers in Cu metallization schemes. The method includes providing a substrate in a process chamber of a deposition system, forming a process gas containing a ruthenium carbonyl precursor vapor and a CO-containing gas, and exposing the substrate to the process gas to deposit a low-resistivity ruthenium metal layer on the substrate by a thermal chemical vapor deposition process, where the substrate is maintained at a temperature between about 100° C. and about 300° C. during the exposing. A semiconductor device containing the ruthenium metal layer formed on a patterned substrate containing one or more vias or trenches, or combinations thereof, is provided.
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