| 摘要 |
A method of manufacturing a semiconductor device includes preparing a projection exposure apparatus and a photomask, the photomask having a transparent substrate and a light shield film arranged in patterns to be transferred to a resist film on a wafer. The patterns include a circuit mask pattern, and first and second mark mask patterns having dimensions which change in accordance with exposure of the resist film. The method further includes forming first and second exposure monitor marks by causing phasing differences of 180 degrees and zero degrees, respectively, of light passing through the corresponding first and second mark mask patterns; measuring the first and second exposure monitor marks; calculating first and second effective exposures based on measured dimensions of the first and second exposure monitor marks; comparing variations of the first and second effective exposures; and changing at least one of a deposit condition of a front-end film formed under the resist film or a resist film coating condition if a variation of the first effective exposure differs from a variation of the second effective exposure. |
